? 2004 ixys all rights reserved symbol test conditions maximum ratings v dss t j = 25 c to 150 c 500 v v dgr t j = 25 c to 150 c; r gs = 1 m ? 500 v v gs continuous 20 v v gsm transient 30 v i d25 t c = 25 c 32 a i dm t c = 25 c, 120 a pulse width limited by t jm i ar t c = 25 c 32 a e ar t c = 25 c 45 m j e as 1500 m j dv/dt i s i dm , di/dt 100 a/ s, v dd v dss , 5 v/ns t j 150 c, r g = 2 ? p d t c = 25 c 416 w t j -55 ... + 150 c t jm 150 c t stg -55 ... + 150 c t l 1.6 mm (0.063 in) from case for 10 s 300 c m d mounting torque 1.13/10 nm/lb.in. weight to-247 6 g to-268 4 g n-channel enhancement mode avalanche rated, low q g , high dv/dt features z ixys advanced low q g process z low gate charge and capacitances - easier to drive - faster switching z international standard packages z low r ds (on) z unclamped inductive switching (uis) rated z molding epoxies meet ul 94 v-0 flammability classification advantages z plus 247 tm package for clip or spring mounting z space savings z high power density symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. v dss v gs = 0 v, i d = 250 ua 500 v v gs(th) v ds = v gs , i d = 4 ma 2.5 4.5 v i gss v gs = 20 v dc , v ds = 0 100 na i dss v ds = v dss t j = 25 c 100 a v gs = 0 v t j = 125 c1ma r ds(on) v gs = 10 v, i d = 0.5 i d25 0.16 ? note 1 hiperfet tm power mosfets q-class plus 247 tm (ixfx) g d (tab) g = gate d = drain s = source tab = drain s g d (tab) to-264 aa (ixfk) ds98604e(01/04) v dss i d25 r ds(on) 500 v 32 a 0.16 ? ? ? ? ? 500 v 32 a 0.16 ? ? ? ? ? t rr 250 ns ixfk 32n50q ixfx 32n50q
ixys reserves the right to change limits, test conditions, and dimensions. ixys mosfets and igbts are covered by one or more of the following u.s. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728b1 6,259,123b1 6,306,728b 1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065b1 6,162,665 6,534,343 6,583,505 symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs v ds = 10 v; i d = 0.5 ? i d25 note 1 18 28 s c iss 3950 pf c oss v gs = 0 v, v ds = 25 v, f = 1 mhz 640 pf c rss 210 pf t d(on) 35 ns t r v gs = 10 v, v ds = 0.5 ? v dss , i d = 0.5 ? i d25 42 ns t d(off) r g = 2 ? (external), 75 n s t f 20 ns q g(on) 150 nc q gs v gs = 10 v, v ds = 0.5 ? v dss , i d = 0.5 ? i d25 26 nc q gd 85 nc r thjc 0.3 k/w r thck 0.15 k/w source-drain diode characteristic values (t j = 25 c, unless otherwise specified) symbol test conditions min. typ. max. i s v gs = 0 v 32 a i sm repetitive; 128 a pulse width limited by t jm v sd i f = i s , v gs = 0 v, note 1 1.5 v t rr 250 ns q rm 0.75 c i rm 7.5 a i f = 25a, -di/dt = 100 a/ s, v r = 100 v dim. mi llimeter inches min. max. min. max. a 4.83 5.21 .190 .205 a 1 2.29 2.54 .090 .100 a 2 1.91 2.16 .075 .085 b 1.14 1.40 .045 .055 b 1 1.91 2.13 .075 .084 b 2 2.92 3.12 .115 .123 c 0.61 0.80 .024 .031 d 20.80 21.34 .819 .840 e 15.75 16.13 .620 .635 e 5.45 bsc .215 bsc l 19.81 20.32 .780 .800 l1 3.81 4.32 .150 .170 q 5.59 6.20 .220 0.244 r 4.32 4.83 .170 .190 terminals: 1 - gate 2 - drain (collector) 3 - source (emitter) 4 - drain (collector) plus 247 tm outline note: 1. pulse test, t 300 s, duty cycle d 2 % ixfk 32n50q ixfx 32n50q to-264 aa outline millimeter inches min. max. min. max. a 4.82 5.13 .190 .202 a1 2.54 2.89 .100 .114 a2 2.00 2.10 .079 .083 b 1.12 1.42 .044 .056 b1 2.39 2.69 .094 .106 b2 2.90 3.09 .114 .122 c 0.53 0.83 .021 .033 d 25.91 26.16 1.020 1.030 e 19.81 19.96 .780 .786 e 5.46 bsc .215 bsc j 0.00 0.25 .000 .010 k 0.00 0.25 .000 .010 l 20.32 20.83 .800 .820 l1 2.29 2.59 .090 .102 p 3.17 3.66 .125 .144 q 6.07 6.27 .239 .247 q1 8.38 8.69 .330 .342 r 3.81 4.32 .150 .170 r1 1.78 2.29 .070 .090 s 6.04 6.30 .238 .248 t 1.57 1.83 .062 .072 dim.
? 2004 ixys all rights reserved t c - degrees c -50 -25 0 25 50 75 100 125 150 i d - amperes 0 8 16 24 32 40 v gs - volts 23456 i d - amperes 0 10 20 30 40 50 t j - degrees c 25 50 75 100 125 150 r ds(on) - normalized 0.8 1.2 1.6 2.0 2.4 2.8 i d = 16a v ds - volts 0 4 8 12 16 20 i d - amperes 0 10 20 30 40 50 v ds - volts 048121620 i d - amperes 0 10 20 30 40 50 60 70 80 5v t j = 125 o c v gs = 10v t j = 25 o c t j = 125 o c 6v 5v 6v v gs =10v 9v 8v 7v v gs = 9v 8v 7v i d = 32a t j = 25 o c i d - amperes 0 102030405060 r ds(on) - normalized 0.8 1.2 1.6 2.0 2.4 2.8 tj=125 0 c tj=25 0 c v gs = 10v 4v figure 3. r ds(on) normalized to 15a/25 o c vs. i d figure 5. drain current vs. case temperature figure 6. admittance curves figure 1. output characteristics at 25 o c figure 2. output characteristics at 125 o c figure 4. r ds(on) normalized to 15a/25 o c vs. t j ixfk 32n50q ixfx 32n50q
ixys reserves the right to change limits, test conditions, and dimensions. ixys mosfets and igbts are covered by one or more of the following u.s. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728b1 6,259,123b1 6,306,728b 1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065b1 6,162,665 6,534,343 6,583,505 pulse width - seconds 10 -3 10 -2 10 -1 10 0 10 1 r(th) jc - k/w 0.02 0.04 0.06 0.08 0.20 0.40 0.01 0.10 v ds - volts 0 5 10 15 20 25 capacitance - pf 100 1000 10000 v sd - volts 0.4 0.6 0.8 1.0 1.2 i d - amperes 0 20 40 60 80 100 t j =125 o c t j =25 o c gate charge - nc 0 50 100 150 200 250 v gs - volts 0 2 4 6 8 10 12 14 f = 1mhz v gs = 0v t j =25 o c vds=300v i d =16a i g =10ma f = 1mhz ciss coss crss figure 7. gate charge figure 8. capacitance curves figure 9. forward voltage drop of the intrinsic diode figure 10. transient thermal resistance ixfk 32n50q ixfx 32n50q
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